Deposição de filmes de carbono amorfo hidrogenado por plasma de catodo oco

• Ano de defesa: 2009
• Autor(a) principal: Vieira, Aline de Lima
• Tipo de documento: Dissertação
• Tipo de acesso: Acesso aberto
• Idioma: por
• Instituição de defesa: Programa de Pós-graduação em Física; Física
• Palavras-chave em Português: Filmes finos; Carbono amorfo; Catodo oco; Deposição por plasma; CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA
• Link de acesso: https://app.uff.br/riuff/handle/1/19193

This work has the object to study the hydrogenated amorphous carbon films a-C:H deposited by parallel plate hollow cathode plasma in silicon substrate. The results obtained were compared with hydrogenated amorphous carbon films a-C:H deposited by usual PECVD (Plasma Enhances Chemical Vapor Deposition). Stress, hardness, refraction índex, self-bias potential versus RF power, deposition rate and emission optical spectroscopy were measured. The stress increased when the films were deposited by hollow cathode, the hardness didn't have important alteration and the refraction index curve versus self-bias potential presented a way very similar the stress curve. In order to obtain a determinate self-bias potential is necessary a greater RF power when the hollow cathode is used. The H' line intensity curve versus deposition rate is linear and the deposition rate for deposition of films by hollow cathode increased when compared when usual PECVD. We believe that the obtained results occur because in deposition by hollow cathode plasma the density increases if compared with usual PECVD plasma.