Propriedades de transportes em fios e poços quânticos

Detalhes bibliográficos
Ano de defesa: 2009
Autor(a) principal: Batista Júnior, Francisco Florêncio
Orientador(a): Não Informado pela instituição
Banca de defesa: Não Informado pela instituição
Tipo de documento: Dissertação
Tipo de acesso: Acesso aberto
Idioma: por
Instituição de defesa: Não Informado pela instituição
Programa de Pós-Graduação: Não Informado pela instituição
Departamento: Não Informado pela instituição
País: Não Informado pela instituição
Palavras-chave em Português:
Link de acesso: http://www.repositorio.ufc.br/handle/riufc/7564
Resumo: Semiconductor materials are responsible for the large development in electronic industry, what made it possible the creation of new devices. The heterostructures gave a large impulse to the solid-state physics. Semiconductors study is nowadays concentrated in the low-dimensional systems, as quantum wells, quantum wires, quantum dots and quantum rings. In this work, we investigate the transport properties of heterostructured quantum wires of double barrier. We begin with calculation of radial confinement energy in a quantum wire InAs/InP of double barrier. We use a cylindrical model of wire with gradual and abrupt interfaces. Transmission coefficients are calculated. We study its behavior varying barriers width,distance between them and the wire radius. In the future, we will use these results to calculate electric current through the device. We also investigate transport properties of bidimensional systems with self-energy potential. We use heterostructures of Si/SiO2 and Si/HfO2. We solve Poisson’s equation with " depending on z, expanding the potential in a Fourier-Bessel series, finding the image potential of the barriers. We calculate the electric current through this potential in function of the applied voltage, varying temperature and the distance between the barriers. We also consider gradual interfaces for the simple barrier case.