Detalhes bibliográficos
| Ano de defesa: |
2011 |
| Autor(a) principal: |
Herval, Leonilson Kiyoshi Sato de |
| Orientador(a): |
Gobato, Yara Galvão
 |
| Banca de defesa: |
Não Informado pela instituição |
| Tipo de documento: |
Dissertação
|
| Tipo de acesso: |
Acesso aberto |
| Idioma: |
por |
| Instituição de defesa: |
Universidade Federal de São Carlos
|
| Programa de Pós-Graduação: |
Programa de Pós-Graduação em Física - PPGF
|
| Departamento: |
Não Informado pela instituição
|
| País: |
BR
|
| Palavras-chave em Português: |
|
| Área do conhecimento CNPq: |
|
| Link de acesso: |
https://repositorio.ufscar.br/handle/ufscar/5031
|
Resumo: |
In this work, we have studied the transport and optical properties of GaAs = AlGaAs resonant tunneling diodes with Si delta-doping at the center of the quantum well. We have studied magneto-transport and polarized resolved photoluminescence from GaAs quantum well and contact layers as a function of applied voltage and magnetic _eld parallel to the tunnel current. Three resonant peaks are observed in the current-voltage characteristics curve and are associated to the resonant tunneling through the bound state of a shallow donor impurity in the quantum well (donor-assisted resonant tunneling), the electron resonant tunneling through the _rst con_ned state in the quantum well and the phonon-assisted tunneling. The contact layer and the quantum well emissions were investigated as a function of applied bias at 15 T. The optical emission from GaAs contact layers shows evidence of highly spin polarized two-dimensional electron (2DEG) and hole (2DHG) gases which a_ects the spin polarization of carriers in the QW. The quantum well (QW) photoluminescence presents strong circular polarization with values up to 85% in 15 T at low applied voltages (at the donor assisted resonant tunneling condition) and for low laser intensities. Our results may be interesting for the developing of new voltage-controlled spintronics devices. |
