Segregação do índio em cristais Ga1-xInxSb obtidos pelo método bridgman vertical

Detalhes bibliográficos
Ano de defesa: 2012
Autor(a) principal: Fernandes, Kendra D`abreu Neto lattes
Orientador(a): Dedavid, Berenice Anina lattes
Banca de defesa: Não Informado pela instituição
Tipo de documento: Dissertação
Tipo de acesso: Acesso aberto
Idioma: por
Instituição de defesa: Pontifícia Universidade Católica do Rio Grande do Sul
Programa de Pós-Graduação: Programa de Pós-Graduação em Engenharia e Tecnologia de Materiais
Departamento: Faculdade de Engenharia
País: BR
Palavras-chave em Português:
Área do conhecimento CNPq:
Link de acesso: http://tede2.pucrs.br/tede2/handle/tede/3214
Resumo: This paper describes the growth and characterization of III-V compound semiconductors, Ga1-xInxSb lightly doped with aluminum (Al) and cadmium (Cd). The Ga1-xInxSb compound is an interesting material for the development of optical modulators, lasers operating in the mid-infrared range, multi-junction solar cell and thermophotovoltaic cell use. The methodology presents the description of the crystal growth process through Vertical Bridgman Method. The distribution of indium and dopants, analyzed by Energy Dispersive Spectroscopy, was correlated to resistivity, carrier number and mobility throughout the crystals. The change of n-type conductivity to p-type in blades of the same crystals classifies the inhomogeneous distribution of indium dopant and suggests the presence of native defects. The inhomogeneous distribution of indium in the crystals and the segregation of indium antimonide at the end of the crystal is probably linked to destabilization of the solidliquid interface during the process of crystal growth