Detalhes bibliográficos
| Ano de defesa: |
2012 |
| Autor(a) principal: |
França, Maurício Paz
 |
| Orientador(a): |
Dedavid, Berenice Anina
|
| Banca de defesa: |
Não Informado pela instituição |
| Tipo de documento: |
Dissertação
|
| Tipo de acesso: |
Acesso aberto |
| Idioma: |
por |
| Instituição de defesa: |
Pontifícia Universidade Católica do Rio Grande do Sul
|
| Programa de Pós-Graduação: |
Programa de Pós-Graduação em Engenharia e Tecnologia de Materiais
|
| Departamento: |
Faculdade de Engenharia
|
| País: |
BR
|
| Palavras-chave em Português: |
|
| Área do conhecimento CNPq: |
|
| Link de acesso: |
http://tede2.pucrs.br/tede2/handle/tede/3215
|
Resumo: |
In Semiconductor materials the electrical conduction occurs through the movement of negative (electrons) or positive (formed by the holes left by the electrons) charges. Thus, the Hall effect in the semiconductor materials may inform the type and density of charge carriers in the sample and the mobility of these charges. In addition to these quantities, other characteristics of the material as the width of the band gap, and electrical conductivity can indicate the quality and purity of the material structure. In this work, an automated system for resistivity and Hall effect measurement in non-standard dimensions samples of semiconductor materials was build. These kinds of samples are found in typical research laboratories. We used the Van der Pauw method who despises the format of the sample surface, since when the sample thickness is known. A cryogenic system involves the sampler and allows measurements at temperatures of -60 to +70 ° C. For automation of the resistivity, number of charge carriers and mobility measurements, a program was developed for system control and data acquisition. A Keithley® Instruments source with voltage and current meters was coupled to the system. The measurements performed on standard samples show that the system meets the requirements of NIST for semiconductor materials, with error less than 2%. |
