Implementação de emissores p+com diferentes dopantes para células solares n+np+ finas

• Ano de defesa: 2018
• Autor(a) principal: Machado, Taila Cristiane Policarpi Alves
• Orientador(a): Moehlecke, Adriano , Zanesco, Izete
• Tipo de documento: Dissertação
• Tipo de acesso: Acesso aberto
• Idioma: por
• Instituição de defesa: Pontifícia Universidade Católica do Rio Grande do Sul
• Programa de Pós-Graduação: Programa de Pós-Graduação em Engenharia e Tecnologia de Materiais
• Departamento: Escola Politécnica
• País: Brasil
• Palavras-chave em Português: Célula Solar; Lâminas Finas de Silício; Emissor P+; Silício Tipo N
• Palavras-chave em Inglês: Solar Cell; Thin Silicon Wafers; P+ Emitter; N-Type Silicon
• Área do conhecimento CNPq: ENGENHARIAS
• Link de acesso: http://tede2.pucrs.br/tede2/handle/tede/8010

The solar cells manufactured in n-type silicon, doped with phosphorus, do not present light induced degradation and they have the potential of achieving high efficiency due to the larger minority charge carrier lifetime. Besides, they are less susceptible to contamination by metal impurities. The aim of this work was to analyze different dopants to obtain the p+ region in n+np+ solar cells manufactured in Czochralski silicon wafers, solar grade, n-type, 120 μm thick. The acceptor impurities used were B, Al, Ga, GaB and AlGa, deposited by spin-on and diffused at high temperature. The temperature, time and gases used in the process of diffusion were ranged. The sheet resistances (R□) of the diffused regions and the impurity concentration profiles were measured. We concluded that the B and GaB can be diffused at 970° C for 20 min to obtain p+ emitters with values of R□ suitable to the production of solar cells with screenprinted metal grid. The Ga and AlGa require high temperatures (greater than 1100° C) and long times to produce doping profiles compatible with the production of solar cells. The Al did not produce low sheet resistance regions, even at temperatures of 1100° C. The use of argon gas instead of the nitrogen did not lead to the decreasing of the sheet resistance. The GaB is the only one doping material analyzed that can be a viable replacement for the B in the production of p+ emitter in n-type solar cells.The GaB was the only one doping material analyzed that allowed the manufacture of solar cells with the maximum efficiency of 13.5%, with the diffusion performed at 1020° C for 20 min. The FF was the main parameter that reduced the efficiency of solar cells doped with GaB when compared to the boron doped cells due to a lower shunt resistance. The n+np+ solar cell, 120 μm thick, that achieved the highest efficiency was doped with boron and reached 14.9%, a value higher than the previously obtained in studies in the NT-Solar with thin silicon wafers.